M3966m Mosfet Verified

: VGS = 10 V, ID = 6 A Result : 42 mΩ at 25°C; 68 mΩ at 85°C Spec : ≤45 mΩ at 25°C → Pass (temperature derating acceptable)

| Parameter | Typical Value | Unit | Condition | |-----------|--------------|------|------------| | Drain-Source Voltage (V( DSS)) | 60 | V | V( GS) = 0V | | Gate-Source Voltage (V( GSS)) | ±20 | V | – | | Continuous Drain Current (I( D)) | 12-15 | A | T( C) = 25°C | | Pulsed Drain Current (I( DM)) | 45-50 | A | Pulse width limited | | On-Resistance (R( DS(on))) | 0.028 – 0.035 | Ω | V( GS) = 10V, I( D) = 5A | | Gate Threshold Voltage (V( GS(th))) | 2 – 4 | V | V( DS) = V( GS), I( D) = 250µA | | Input Capacitance (C( iss)) | 450 – 550 | pF | V(_DS) = 25V, f = 1MHz | | Total Gate Charge (Q( g)) | 12 – 16 | nC | V( GS) = 10V | m3966m mosfet verified

): Often rated up to 80A or higher, depending on the specific package and cooling. Low : VGS = 10 V, ID = 6

The marking “M3966M” seen on small QFN/PDFN MOSFETs used in laptop and GPU VRAM power circuits most commonly corresponds to the UBIQ (or OEM-labeled) QM3966 family (examples: QM3966M3, QM3966M6). These are N‑channel power MOSFETs in compact packages (PDFN/QFN variants) rated for low voltage (≈30 V) and designed for synchronous buck switching in high-current, space-constrained applications (VRAM/GPU VR rails, CPU/GPU power stages). : VGS = 10 V